二维材料自限激光结晶与直写

来源: | 作者:IJEM | 发布时间: 2019-06-24 | 1736 次浏览 | 分享到:

Self-limiting laser crystallization and direct writing of 2D materials

Authors 作者

Professor Mahjouri-Samani is currently an Assistant Professor in the Department of Electrical & Computer Engineering (ECE) at Auburn University (AU). He received his BS (2008) and Ph.D. (2013) degrees from the University of Nebraska-Lincoln (UNL). Before joining AU, he spent four years as a postdoctoral research associate in the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory (ORNL). Professor Mahjouri-Samani is now leading the Laser-Assisted Science and Engineering of Emerging Nanomaterials and Devices (LASE-END) research group at AU(http://wp.auburn.edu/Mahjouri/). LASE-END research emphasis is focused on developing new laser-based syntheses, processing, and in-situ diagnostic methods to enable the use of quantum materials in nanoelectronics, optoelectronics, photonics, and sensing applications. LASE-END is particularly interested in spatial, temporal, spectral, and energy-resolved laser-quantum materials interactions leading to controlled processing and real-time diagnostics solutions.

Mr. Zabihollah Ahmadi, the first author of the article, is currently a Ph.D. student in Prof. Mahjouri-Samani’s group. His research interest is focused on understanding and controlling the spatiotemporal laser-materials interactions for direct writing and pattering of 2D and other low-dimensional quantum materials on various substrates with potential applications in flexible electronic and sensing devices.

Brief introduction 简介

The recent discovery of atomically thin two-dimensional (2D) quantum materials including transition metal dichalcogenides (TMDCs) has revealed a promising potential for advancing the future of optoelectronics, photonics, sensing, and energy applications. Direct growth, patterning, and integration of 2D materials on various substrates are essential steps toward enabling their potential for use in the next generation of devices. The conventional gas-phase growth techniques, however, are not compatible with direct patterning processes. In this work, a laser-based synthesis and processing method is reported that relies on self-limiting laser crystallization (SLLC) of the stoichiometric amorphous thin layer (~3-5 nm) of 2D materials. This technique mainly takes advantage of significant contrasts between the optical properties of the amorphous and crystalline MoS2 phases allowing the deliberate design of laser 2D material interactions for the self-limiting crystallization phenomena with increased quality and a broad processing window. This unique laser processing approach allows high-quality crystallization, direct writing, patterning, and the integration of various 2D materials into future functional devices.

Read the article for free：